(China (Mainland))
Product Summary
The FQPF9P25 is a P-Channel enhancement mode power field effect transistor. It is produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. The FQPF9P25 is well suited for high efficiency switching DC/DC converters.
Parametrics
FQPF9P25 absolute maximum ratings: (1)VDSS Drain-Source Voltage: -250 V; (2)ID Drain Current - Continuous (TC = 25℃): -6.0 A; Continuous (TC = 100℃): -3.9 A; (3)IDM Drain Current - Pulsed: -24 A; (4)VGSS Gate-Source Voltage: ± 30 V; (5)EAS Single Pulsed Avalanche Energy: 650 mJ; (6)IAR Avalanche Current: -6.0 A; (7)EAR Repetitive Avalanche Energy: 5.0 mJ; (8)dv/dt Peak Diode Recovery dv/dt: -5.5 V/ns; (9)PD Power Dissipation (TC = 25℃): 50 W; Derate above 25℃: 0.4 W/℃; (10)TJ, TSTG Operating and Storage Temperature Range: -55 to +150 ℃; (11)TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds: 300 ℃.
Features
FQPF9P25 features: (1)-6.0A, -250V, RDS(on) = 0.62Ω@VGS = -10 V; (2)Low gate charge ( typical 29 nC); (3)Low Crss ( typical 27 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 FQPF9P25 |
Fairchild Semiconductor |
MOSFET 250V P-Channel QFET |
Data Sheet |
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