Product Summary

The W20NM60 is a FDmesh Power MOSFET with fast diode. It associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. The W20NM60 is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. It is used in switching application.

Parametrics

W20NM60 absolute maximum ratings: (1)VDS Drain-source voltage (VGS = 0): 600 V; (2)VDGR Drain-gate voltage (RGS = 20 kΩ): 600 V; (3)VGS Gate- source voltage: ±30 V; (4)ID Drain current (continuous) at TC = 25℃: 20 A; (5)ID Drain current (continuous) at TC = 100℃: 12.6 A; (6)IDM Drain current (pulsed): 80 A; (7)PTOT Total dissipation at TC = 25℃: 214 W; (8)Derating factor: 1.42 W/℃; (9)dv/dt Peak diode recovery voltage slope: 20 V/ns; (10)VISO Insulation withstand voltage (DC): 2500 V; (11)Tj Tstg Operating junction temperature, Storage temperature: – 65 to 150 ℃.

Features

W20NM60 features: (1)High dv/dt and avalanche capabilities; (2)100% Avalanche tested; (3)Low input capacitance and gate charge; (4)Low gate input resistancE; (5)Tight process control and high manufacturing yields.

Diagrams

W20NM60 diagram